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Giấy phép số 4978/GP-TTĐT do Sở Thông tin và Truyền thông Hà Nội cấp ngày 14 tháng 10 năm 2019 / Giấy phép SĐ, BS GP ICP số 2107/GP-TTĐT do Sở TTTT Hà Nội cấp ngày 13/7/2022.
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More than a century after quantum mechanics emerged, scientists have observed how electrons behave when they tunnel through barriers. In classical physics, an object cannot pass through a barrier without sufficient energy. At the quantum level, however, this restriction is not absolute. Quantum tunneling is a foundational process behind modern semiconductor technology, enabling transistors to function and supporting the computational capabilities of chips used in devices ranging from computers to smartphones.
A research team at POSTECH (Korea), in collaboration with the Max Planck Institute (Germany), used high-intensity laser pulses to drive electrons into tunneling. The results indicate that electrons do not simply cross the barrier. Instead, they can gain energy while moving, then collide with the nucleus before emerging on the other side.
The team describes this mechanism as “under-the-barrier recollision” (UBR).
The UBR model also helps explain phenomena such as Freeman resonance, described as peaks of energy in the electron spectrum. Previously, these peaks were thought to arise from absorbing multiple photons. The new data suggest that the recollision mechanism plays a more significant role at high laser intensities.
Experiments confirmed key predictions of the UBR model. Electrons were observed with higher energies and more stable behavior as laser intensity varied, aligning with the expectations of UBR theory. The findings are presented as completing a more direct account of electron dynamics during tunneling, which had previously been inferred only indirectly.
Project leader Professor Dong Eon Kim said the discovery brings scientists closer to understanding and controlling electron behavior as electrons traverse the atomic “barrier.” He argued that learning how this mechanism works could enable more precise control of tunneling in the future.
The significance is also framed as practical: because electron tunneling underpins semiconductor technology, deeper insights could affect chip design. The research is also positioned as opening new avenues for quantum computing and ultrafast laser systems.

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